IXXH50N60B3D1
IXYS
IXYS
IGBT 600V 120A 600W TO247
$11.95
Available to order
Reference Price (USD)
1+
$10.58000
10+
$9.52100
30+
$8.67467
120+
$7.82825
270+
$7.19356
510+
$6.55882
1,020+
$5.71253
Exquisite packaging
Discount
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Optimize your power systems with the IXXH50N60B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXH50N60B3D1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
- Power - Max: 600 W
- Switching Energy: 670µJ (on), 740µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/100ns
- Test Condition: 360V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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