IXYN120N65C3D1
IXYS
IXYS
IGBT MOD DISC XPT-GENX3 SOT227UI
$40.45
Available to order
Reference Price (USD)
1+
$40.44700
500+
$40.04253
1000+
$39.63806
1500+
$39.23359
2000+
$38.82912
2500+
$38.42465
Exquisite packaging
Discount
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Discover the IXYN120N65C3D1 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXYN120N65C3D1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXYN120N65C3D1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 190 A
- Current - Collector Pulsed (Icm): 620 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
- Power - Max: 830 W
- Switching Energy: 1.25mJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: 28ns/127ns
- Test Condition: 400V, 50A, 2Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B