Shopping cart

Subtotal: $0.00

JAN1N6622U

Microsemi Corporation
JAN1N6622U Preview
Microsemi Corporation
DIODE GEN PURP 600V 1.2A A-MELF
$13.65
Available to order
Reference Price (USD)
1+
$13.65000
500+
$13.5135
1000+
$13.377
1500+
$13.2405
2000+
$13.104
2500+
$12.9675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 150°C

Related Products

Microchip Technology

1N3614/TR

Diodes Incorporated

RS1G-13-F

Rohm Semiconductor

RFN5TF8SFHC9

Vishay General Semiconductor - Diodes Division

MBRB760-E3/81

Vishay General Semiconductor - Diodes Division

AR1PJHM3/84A

Nexperia USA Inc.

BAV70W/ZL,115

Taiwan Semiconductor Corporation

B0530WS RRG

Vishay General Semiconductor - Diodes Division

VS-STPS1045B-M3

Top