JAN2N5014
Microsemi Corporation
Microsemi Corporation
TRANS NPN 900V 0.2A TO5
$0.00
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the JAN2N5014 Bipolar Junction Transistor (BJT) by Microsemi Corporation. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the JAN2N5014 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microsemi Corporation for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
Related Products
onsemi
BC490AZL1G
onsemi
BD677ASTU
Panasonic Electronic Components
XN09D5800L
onsemi
BC213L
onsemi
BC856ALT3
Toshiba Semiconductor and Storage
2SC2229-O(T6SAN2FM
Panasonic Electronic Components
2SB1462J0L
onsemi
MPSA13_D26Z
onsemi
KSE340STU
onsemi