2SC2229-O(T6SAN2FM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 150V 0.05A TO92MOD
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Enhance your circuit designs with the 2SC2229-O(T6SAN2FM Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SC2229-O(T6SAN2FM is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Toshiba Semiconductor and Storage to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800 mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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