JAN2N6250T1
Microsemi Corporation
Microsemi Corporation
TRANS NPN 275V 10A TO254AA
$244.88
Available to order
Reference Price (USD)
1+
$244.87500
500+
$242.42625
1000+
$239.9775
1500+
$237.52875
2000+
$235.08
2500+
$232.63125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the JAN2N6250T1 Bipolar Junction Transistor (BJT) by Microsemi Corporation. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the JAN2N6250T1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microsemi Corporation for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 275 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
- Power - Max: 6 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
- Supplier Device Package: TO-254AA
Related Products
onsemi
2SC3859-TB-E
onsemi
2SC3954E
Microchip Technology
JANS2N5666U3/TR
Microchip Technology
JAN2N2222AUB/TR
Microchip Technology
2N6186
onsemi
2SB892T-AE
Microchip Technology
2N697S
Microchip Technology
2N6279
Microchip Technology
JAN2N6301P
Microchip Technology