JANS2N3506AL
Microchip Technology
Microchip Technology
POWER BJT
$72.45
Available to order
Reference Price (USD)
1+
$72.45000
500+
$71.7255
1000+
$71.001
1500+
$70.2765
2000+
$69.552
2500+
$68.8275
Exquisite packaging
Discount
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Optimize your electronic systems with the JANS2N3506AL Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the JANS2N3506AL delivers superior performance in diverse environments. Microchip Technology's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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