Shopping cart

Subtotal: $0.00

JANSR2N7381

Microsemi Corporation
JANSR2N7381 Preview
Microsemi Corporation
MOSFET N-CH 200V 9.4A TO257
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Rds On (Max) @ Id, Vgs: 490mOhm @ 9.4A, 12V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 75W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-257
  • Package / Case: TO-257-3

Related Products

NXP USA Inc.

PMZ1200UPE315

Microsemi Corporation

APT70SM70B

Renesas Electronics America Inc

2SK3479-Z-AZ

Infineon Technologies

IRLBD59N04ETRLP

Fairchild Semiconductor

FDV302P

Microsemi Corporation

APTM100U13SG

Diodes Incorporated

DMP3017SFG-7

Microsemi Corporation

2N7236U

Infineon Technologies

64-2155PBF

Top