JANTXV2N3999P
Microchip Technology
Microchip Technology
POWER BJT
$172.00
Available to order
Reference Price (USD)
1+
$172.00500
500+
$170.28495
1000+
$168.5649
1500+
$166.84485
2000+
$165.1248
2500+
$163.40475
Exquisite packaging
Discount
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Experience unmatched performance with the JANTXV2N3999P Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the JANTXV2N3999P delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
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