JTDB25
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 1.215GHZ 55AW-1
$0.00
Available to order
Reference Price (USD)
25+
$314.70400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JTDB25 by Microsemi Corporation is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust Microsemi Corporation for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.5dB
- Power - Max: 97W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Current - Collector (Ic) (Max): 5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW-1
- Supplier Device Package: 55AW-1
Related Products
Microsemi Corporation
MPA201HS
Microsemi Corporation
62091
Microsemi Corporation
MS2588
MACOM Technology Solutions
MAPH-011002-000000
Microsemi Corporation
MDS70
Microsemi Corporation
90025HS
STMicroelectronics
SD1727
Microsemi Corporation
DME500
Microsemi Corporation
23A017
Microsemi Corporation