KSB596YTU
onsemi
onsemi
TRANS PNP 80V 4A TO220-3
$1.04
Available to order
Reference Price (USD)
1+
$0.87000
10+
$0.76500
100+
$0.58660
500+
$0.46368
1,000+
$0.37094
Exquisite packaging
Discount
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Optimize your electronic systems with the KSB596YTU Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the KSB596YTU delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
- Current - Collector Cutoff (Max): 70µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
- Power - Max: 30 W
- Frequency - Transition: 3MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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