KSD1020GBU
onsemi
onsemi
TRANS NPN 25V 0.7A TO92S
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Upgrade your electronic designs with the KSD1020GBU Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the KSD1020GBU is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 350 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
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