LND150N3-G-P014
Microchip Technology
        
                
                                Microchip Technology                            
                        
                                MOSFET N-CH 500V 30MA TO92-3                            
                        $0.70
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.70000
                                        500+
                                            $0.693
                                        1000+
                                            $0.686
                                        1500+
                                            $0.679
                                        2000+
                                            $0.672
                                        2500+
                                            $0.665
                                        Exquisite packaging
                            Discount
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                    Meet the LND150N3-G-P014 by Microchip Technology, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The LND150N3-G-P014 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Microchip Technology.                
            Specifications
- Product Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 500 V
 - Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
 - Drive Voltage (Max Rds On, Min Rds On): 0V
 - Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Vgs (Max): ±20V
 - Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
 - FET Feature: Depletion Mode
 - Power Dissipation (Max): 740mW (Ta)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-92-3
 - Package / Case: TO-226-3, TO-92-3 (TO-226AA)
 
