LSIC1MO120E0120
Littelfuse Inc.
Littelfuse Inc.
SICFET N-CH 1200V 27A TO247-3
$16.81
Available to order
Reference Price (USD)
1+
$14.74000
10+
$13.40000
25+
$12.39520
100+
$11.39000
450+
$10.38500
900+
$9.38000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The LSIC1MO120E0120 from Littelfuse Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Littelfuse Inc.'s LSIC1MO120E0120 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
- Vgs(th) (Max) @ Id: 4V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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