MBR10H200CT
Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 10A TO220AB
$0.55
Available to order
Reference Price (USD)
1+
$0.54978
500+
$0.5442822
1000+
$0.5387844
1500+
$0.5332866
2000+
$0.5277888
2500+
$0.522291
Exquisite packaging
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For engineers specializing in power electronics, the MBR10H200CT by Taiwan Semiconductor Corporation represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Taiwan Semiconductor Corporation's patented junction design, the MBR10H200CT achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB