Shopping cart

Subtotal: $0.00

MBR200200CTR

GeneSiC Semiconductor
MBR200200CTR Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 100A 2 TOWER
$90.14
Available to order
Reference Price (USD)
25+
$70.90600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 mA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower

Related Products

Vishay General Semiconductor - Diodes Division

MF30H100CTHE3_B/P

Semtech Corporation

SET100123

Semtech Corporation

SCNAR10

Vishay General Semiconductor - Diodes Division

VS-VSKJ320-04PBF

Semtech Corporation

SCPNP5

Semtech Corporation

SET030611

Vishay General Semiconductor - Diodes Division

VS-VSKJ91/10

Panjit International Inc.

MER1002CT_T0_00601

Vishay General Semiconductor - Diodes Division

VS-VSKJ236/12PBF

Renesas Electronics America Inc

RKD702KL-1N#R1

Top