MBR2X080A120
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 120V 80A SOT227
$48.63
Available to order
Reference Price (USD)
65+
$30.95708
Exquisite packaging
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For engineers specializing in power electronics, the MBR2X080A120 by GeneSiC Semiconductor represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With GeneSiC Semiconductor's patented junction design, the MBR2X080A120 achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 80A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 80 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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