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MBR60035CT

GeneSiC Semiconductor
MBR60035CT Preview
GeneSiC Semiconductor
DIODE MODULE 35V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35 V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 20 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower

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