MDI150-12A4
IXYS
IXYS
IGBT MOD 1200V 180A 760W Y3DCB
$0.00
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Reference Price (USD)
2+
$87.85500
Exquisite packaging
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Optimize your power systems with IXYS's MDI150-12A4, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MDI150-12A4 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MDI150-12A4 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 180 A
- Power - Max: 760 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 7.5 mA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB