MKI65-06A7T
IXYS
IXYS
IGBT MODULE 600V E2
$0.00
Available to order
Reference Price (USD)
6+
$61.16667
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MKI65-06A7T IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MKI65-06A7T offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MKI65-06A7T in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MKI65-06A7T IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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