MDI200-12A4
IXYS
IXYS
IGBT MOD 1200V 270A 1130W Y3DCB
$0.00
Available to order
Reference Price (USD)
2+
$103.20000
Exquisite packaging
Discount
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The MDI200-12A4 by IXYS redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the MDI200-12A4 in high-efficiency servo controllers for manufacturing automation. IXYS combines innovation with quality in every MDI200-12A4 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 270 A
- Power - Max: 1130 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 10 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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