MDS1100
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.03GHZ 55TU-1
$0.00
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Reference Price (USD)
25+
$783.95920
Exquisite packaging
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The MDS1100 from Microsemi Corporation is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the MDS1100 is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Microsemi Corporation for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.9dB
- Power - Max: 8750W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 100A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 55TU-1
- Supplier Device Package: 55TU-1
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