MG12100D-BA1MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MODULE 1200V 160A 1000W D3
$0.00
Available to order
Reference Price (USD)
1+
$115.33000
10+
$108.65600
25+
$103.99000
100+
$98.65680
Exquisite packaging
Discount
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Discover the power of Littelfuse Inc.'s MG12100D-BA1MM, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The MG12100D-BA1MM performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Littelfuse Inc.'s MG12100D-BA1MM, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 1000 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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