MIAA20WD600TMH
IXYS
IXYS
IGBT MOD 600V 29A 100W MINIPACK2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with IXYS's MIAA20WD600TMH IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MIAA20WD600TMH offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MIAA20WD600TMH in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MIAA20WD600TMH IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 29 A
- Power - Max: 100 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Current - Collector Cutoff (Max): 1.1 mA
- Input Capacitance (Cies) @ Vce: 900 pF @ 25 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
Related Products
Infineon Technologies
P2000D45X168HPSA1
Microsemi Corporation
APTGF200U120DG
Powerex Inc.
CM150DY-34A
Littelfuse Inc.
MG12150S-DEN2MM
Infineon Technologies
FF300R06KE3_B2
Infineon Technologies
FS100R12KT4GPBPSA1
Microsemi Corporation
APTGT100DA170TG
Vishay General Semiconductor - Diodes Division
GB35XF120K
Microsemi Corporation
APTGT150DA170G
IXYS