MIEB100W1200TEH
IXYS
IXYS
IGBT MODULE 1200V 183A 630W E3
$0.00
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Reference Price (USD)
5+
$141.41800
Exquisite packaging
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The MIEB100W1200TEH from IXYS exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the MIEB100W1200TEH in megawatt-level wind turbine converters. With IXYS's proven track record, the MIEB100W1200TEH represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 183 A
- Power - Max: 630 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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