MUBW30-12A6
IXYS
IXYS
IGBT MODULE 1200V 31A 104W E1
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Optimize your power systems with IXYS's MUBW30-12A6, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MUBW30-12A6 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MUBW30-12A6 module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 31 A
- Power - Max: 104 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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