MIO1800-17E10
IXYS
IXYS
IGBT MODULE 1700V 1800A E10
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Experience next-generation power control with IXYS's MIO1800-17E10 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MIO1800-17E10 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MIO1800-17E10 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MIO1800-17E10 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1800 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1800A
- Current - Collector Cutoff (Max): 120 mA
- Input Capacitance (Cies) @ Vce: 166 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E10
- Supplier Device Package: E10
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