MIW50N65H-BP
Micro Commercial Co
Micro Commercial Co
IGBT
$5.70
Available to order
Reference Price (USD)
1+
$5.70000
500+
$5.643
1000+
$5.586
1500+
$5.529
2000+
$5.472
2500+
$5.415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the MIW50N65H-BP Single IGBT transistor from Micro Commercial Co. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the MIW50N65H-BP delivers consistent and reliable operation. Trust Micro Commercial Co's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.59mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: 186 nC
- Td (on/off) @ 25°C: 69ns/404ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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