MKI50-12E7
IXYS
IXYS
IGBT MODULE 1200V 90A 350W E2
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Optimize your power systems with IXYS's MKI50-12E7, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MKI50-12E7 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MKI50-12E7 module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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