MKI80-06T6K
IXYS
IXYS
IGBT MODULE 600V 89A 210W E1
$0.00
Available to order
Reference Price (USD)
10+
$48.95900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with IXYS's MKI80-06T6K, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MKI80-06T6K is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MKI80-06T6K module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 89 A
- Power - Max: 210 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
Related Products
Powerex Inc.
CP20TD1-12A
Infineon Technologies
FS450R07A2P2B31BOSA1
IXYS
IXGN200N60
IXYS
MIXA30W1200TMH
Littelfuse Inc.
MG17225WB-BN4MM
IXYS
MWI100-06A8
Microsemi Corporation
APTGL325DA120D3G
Microsemi Corporation
APTGT150A170D1G
onsemi
NXH80T120L2Q0SG
Vishay General Semiconductor - Diodes Division