MMBTH11-FS
Fairchild Semiconductor
Fairchild Semiconductor
RF 0.05A, VERY HIGH FREQUENCY BA
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MMBTH11-FS, a cutting-edge RF Bipolar Junction Transistor (BJT) from Fairchild Semiconductor, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The MMBTH11-FS features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Fairchild Semiconductor for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
KST10MTF
Renesas
NE68018-T1-A
NXP USA Inc.
BFU520R
onsemi
2SC5536A-TL-H
MACOM Technology Solutions
MRF454
NXP USA Inc.
BFU550XVL
Infineon Technologies
BFP460H6327XTSA1
NTE Electronics, Inc
NTE2402
Toshiba Semiconductor and Storage
MT3S16U(TE85L,F)
NXP USA Inc.