MMDT3946-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP 40V 0.2A SOT363
$0.48
Available to order
Reference Price (USD)
3,000+
$0.09200
6,000+
$0.08360
15,000+
$0.07520
30,000+
$0.07100
75,000+
$0.06400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the MMDT3946-7-F Diodes Incorporated s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the MMDT3946-7-F demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz, 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
STMicroelectronics
ULQ2004D1013TR
Micro Commercial Co
MMDT2222A-TP
Nexperia USA Inc.
BC817RAPNZ
Nexperia USA Inc.
PBSS4112PANP,115
Toshiba Semiconductor and Storage
HN1A01FE-GR,LXHF
Linear Integrated Systems, Inc.
LS350 TO-78 6L
Nexperia USA Inc.
PUMT1,115
Linear Integrated Systems, Inc.
LS351 SOT-23 6L
NXP USA Inc.
PBSS4350SPN,115
Texas Instruments