MMDT4401-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 40V 0.6A SOT363
$0.00
Available to order
Reference Price (USD)
30,000+
$0.16000
Exquisite packaging
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The MMDT4401-7 BJT Array from Diodes Incorporated brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The MMDT4401-7 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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