MMRF1006HR5
Freescale Semiconductor
Freescale Semiconductor
RF POWER FIELD-EFFECT TRANSISTOR
$543.12
Available to order
Reference Price (USD)
50+
$443.27560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMRF1006HR5 from Freescale Semiconductor is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MMRF1006HR5 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Freescale Semiconductor's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 450MHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 1000W
- Voltage - Rated: 120 V
- Package / Case: SOT-979A
- Supplier Device Package: NI-1230-4H
Related Products
Solid State Inc.
3N202
Wolfspeed, Inc.
PTFC260362SC-V1-R250
onsemi
MCH5801-TL-E
NXP USA Inc.
A2V07H400-04NR3
onsemi
SCH2819-TL-H
onsemi
STMFS4855NST1G
onsemi
2SK3487-TD-E
Freescale Semiconductor
MRF8P20160HSR3
NXP USA Inc.
MMRF1008GHR5
NXP USA Inc.