MRF327
MACOM Technology Solutions
MACOM Technology Solutions
RF TRANS NPN 33V 316-01
$0.00
Available to order
Reference Price (USD)
1+
$59.19000
10+
$55.71200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the MRF327, a cutting-edge RF Bipolar Junction Transistor (BJT) from MACOM Technology Solutions, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The MRF327 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose MACOM Technology Solutions for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 33V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9dB
- Power - Max: 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
- Current - Collector (Ic) (Max): 9A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 316-01
- Supplier Device Package: 316-01, STYLE 1
Related Products
onsemi
MMBT918LT1
Toshiba Semiconductor and Storage
MT3S20P(TE12L,F)
Renesas Electronics America Inc
CA3127MZ
Infineon Technologies
BGB 540 E6327
CEL
NE851M03-A
Microsemi Corporation
MRF5812GR2
Central Semiconductor Corp
MPSH81 TRE
Broadcom Limited
AT-32033-BLKG
NXP USA Inc.
BFS520,115
NXP USA Inc.