MRF5S19150HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.99GHZ NI-880S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF5S19150HSR3 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MRF5S19150HSR3 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 14dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.4 A
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-880S
- Supplier Device Package: NI-880S
Related Products
Wolfspeed, Inc.
PTFB092707FH-V1-R0
NXP USA Inc.
A2T21S260-12SR3
NXP USA Inc.
A2T26H165-24SR3
Ampleon USA Inc.
BLS9G2934LS-400
Ampleon USA Inc.
BLF8G27LS-140V
STMicroelectronics
STAC9200
NXP USA Inc.
MRF6S19100MR1
Wolfspeed, Inc.
PTFB212503EL-V1-R0
Ampleon USA Inc.
BLF8G19LS-170BV
CEL