MRF6S21190HR5
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.17GHZ NI880
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Meet the MRF6S21190HR5, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRF6S21190HR5 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRF6S21190HR5 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 54W
- Voltage - Rated: 68 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-880H-2L
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