MRF8P20160HR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.92GHZ
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Meet the MRF8P20160HR3, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The MRF8P20160HR3 combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the MRF8P20160HR3 into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.92GHz
- Gain: 16.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 37W
- Voltage - Rated: 65 V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
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