MRF8S18120HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.81GHZ NI-780S
$0.00
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF8S18120HSR5 from NXP USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the MRF8S18120HSR5 is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust NXP USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS
- Frequency: 1.81GHz
- Gain: 18.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 72W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
Related Products
NXP USA Inc.
BF1107,235
Infineon Technologies
PTFA082201F V1
Infineon Technologies
PTFA190451FV4XWSA1
onsemi
BF245C_J35Z
NXP USA Inc.
MRF7S38075HR5
NXP USA Inc.
MRF8HP21080HSR3
Renesas Electronics America Inc
NE3517S03-T1C-A
Ampleon USA Inc.
BLF10M6200U
STMicroelectronics
SD2902
NXP USA Inc.