MRF8S21120HR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 2.17GHZ NI780H
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF8S21120HR3 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The MRF8S21120HR3's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the MRF8S21120HR3 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.17GHz
- Gain: 17.6dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 850 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
Related Products
Infineon Technologies
PTFA181001EV4R250XTMA1
NXP USA Inc.
MRF7S18125BHSR5
STMicroelectronics
PD85006-E
Ampleon USA Inc.
BLF6G20S-45,112
STMicroelectronics
LET9060STR
Infineon Technologies
PTFA192401EV4XWSA1
onsemi
2N5555_D74Z
NXP USA Inc.
CLF1G0035-200PU
NXP USA Inc.
MMRF1013HR5
Ampleon USA Inc.