MRFE6VP5600HSR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230S
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Discover the MRFE6VP5600HSR6, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The MRFE6VP5600HSR6 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the MRFE6VP5600HSR6 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: LDMOS (Dual)
- Frequency: 230MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 600W
- Voltage - Rated: 130 V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S
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