FD16001200R17HP4B2BOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE VCES 1700V 1600A
$2,257.97
Available to order
Reference Price (USD)
1+
$1,462.49000
Exquisite packaging
Discount
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Infineon Technologies's FD16001200R17HP4B2BOSA2 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FD16001200R17HP4B2BOSA2 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Dual Brake Chopper
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 10500 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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