MSCSM120HM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$313.41
Available to order
Reference Price (USD)
1+
$313.41000
500+
$310.2759
1000+
$307.1418
1500+
$304.0077
2000+
$300.8736
2500+
$297.7395
Exquisite packaging
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Discover the high-performance MSCSM120HM31CTBL2NG from Microchip Technology, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the MSCSM120HM31CTBL2NG delivers unmatched performance. Trust Microchip Technology's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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