PJT7603_R1_00001
Panjit International Inc.
Panjit International Inc.
COMPLEMENTARY ENHANCEMENT MODE M
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJT7603_R1_00001 by Panjit International Inc. is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the PJT7603_R1_00001 ensures consistent and dependable performance. Panjit International Inc.'s commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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