MSCSM170TLM23C3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$439.33
Available to order
Reference Price (USD)
1+
$439.33000
500+
$434.9367
1000+
$430.5434
1500+
$426.1501
2000+
$421.7568
2500+
$417.3635
Exquisite packaging
Discount
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Elevate your electronics with the MSCSM170TLM23C3AG from Microchip Technology, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the MSCSM170TLM23C3AG provides the reliability and efficiency you need. Microchip Technology's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP3F
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