MSRT200160AD
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.6KV 200A 3 TOWER
$84.40
Available to order
Reference Price (USD)
1+
$84.40400
500+
$83.55996
1000+
$82.71592
1500+
$81.87188
2000+
$81.02784
2500+
$80.1838
Exquisite packaging
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Engineered for excellence, GeneSiC Semiconductor's MSRT200160AD represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With GeneSiC Semiconductor's proprietary screening processes, the MSRT200160AD guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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