MT4S300U(TE85L,O,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X34 PB-F RADIO-FREQUENCY SIGE HE
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
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Enhance your RF designs with the MT4S300U(TE85L,O,F, a high-efficiency Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The MT4S300U(TE85L,O,F features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Toshiba Semiconductor and Storage for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4V
- Frequency - Transition: 26.5GHz
- Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
- Gain: 16.9dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
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