MUN5314DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04760
6,000+
$0.04161
15,000+
$0.03563
30,000+
$0.03363
75,000+
$0.03164
150,000+
$0.02831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with onsemi's MUN5314DW1T1G, a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The MUN5314DW1T1G is perfect for use in audio equipment, power supplies, and automotive control systems. With onsemi's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the MUN5314DW1T1G is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
onsemi
NSBA123TDP6T5G
Panasonic Electronic Components
XP0421200L
Toshiba Semiconductor and Storage
RN2601(TE85L,F)
onsemi
NSVBC123JPDXV6T1G
Nexperia USA Inc.
NHUMH13F
onsemi
MUN5116DW1T1G
Diodes Incorporated
DDA114TUQ-7-F
Diodes Incorporated
DDC144EH-7
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Diodes Incorporated