MUN5315DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.33
Available to order
Reference Price (USD)
3,000+
$0.05286
6,000+
$0.04621
15,000+
$0.03956
30,000+
$0.03735
75,000+
$0.03513
150,000+
$0.03144
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing onsemi's MUN5315DW1T1G, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. onsemi's dedication to excellence ensures that the MUN5315DW1T1G meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Toshiba Semiconductor and Storage
RN1701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1707,LF
Diodes Incorporated
DCX114YUQ-7-F
onsemi
NSBC114TDXV6T1
onsemi
MUN5114DW1T1
onsemi
NSVBC114YPDXV6T1G
Diodes Incorporated
DDC114YH-7
Toshiba Semiconductor and Storage
RN2901,LF(CT
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
onsemi