MURT10040R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE ARRAY GP REV POLAR3TOWER
$93.05
Available to order
Reference Price (USD)
25+
$87.53920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MURT10040R from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MURT10040R maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Related Products
STMicroelectronics
STPS160H100TV
SMC Diode Solutions
200CNQ045
IXYS
DPF80C200HB
Rohm Semiconductor
RB088T-30NZC9
Micro Commercial Co
MBR60200CT-BP
Vishay General Semiconductor - Diodes Division
VS-MBRB4045CTHM3
Nexperia USA Inc.
BAV199W,115
Vishay General Semiconductor - Diodes Division
FEP30JP-E3/45
IXYS
DSP25-16AR
Vishay General Semiconductor - Diodes Division